ZnSのエピタキシャル成長とその応用
1980 年 49 巻 1 号 p. 43-51
詳細
1980 年 49 巻 1 号 p. 43-51
The present status of researches on epitaxial growth of ZnS and its applications to electronic devices are reviewed. The epitaxial growth technique is found to be useful to prepare highly ordered ZnS crystals free from twins, grain boundaries, stacking faults, etc. because of the low growth-temperatures. Various methods for the preparations of ZnS eptaxial films on singlecrystalline substrates, such as vacuum deposition, sputtering, sublimation, chemical transport, chemical vapor deposition, molecular-beam epitaxy and liquid phase epitaxy are explained. Crystal structures and electrical and optical properties of the epitaxial ZnS films are discussed, and some device applications of the epitaxial crystals are described briefly.
