シリコンへのチャネリングイオン注入

抄録

The channeled-ion implantation into silicon is an attractive doping technique which is more advantageous than the random implantation in the characteristics such as deeper doping profile, less radiation damage and thinner selective implantation mask.
This paper reviews the theory of channeling, carrier depth distribution of implanted ions, implantation machine and the applications to silicon devices. The effects on the carrier profile of implanted ions is discussed in terms of various parameters such as the crystal orientation, the ion energy, the ion species, the ion dose, the target temperature, the surface preparation of target.
General shape of carrier depth distribution of channeled dopant ions can be determined theoretically but detailed profile must still be determined experimentally. In the advance of the machine technology, the parallel-scanning system of ion beam can provide high doping uniformity and reproducibility comparable to that of random implantation.