遠赤外光検出器
光伝導検出器の高速応答性
1981 年 50 巻 11 号 p. 1188-1198
詳細
1981 年 50 巻 11 号 p. 1188-1198
In order to determine the fast response capability of the photoconductive detectors of semiconductors, the recombination life time of the electrons which were excited from the impurity states to the conduction band by the far-infrared radiation has been discussed. In conclusion, the Ge photoconductive detectors are confirmed to be available to observe modulated radiation up to frequency as high as a few GHz. The video response and the heterodyne response have been defined. The definitions give the relation between the noise equivalent power of the video receiver NEPz and that of the heterodyne receiver NEPh. The brief descriptions are given of the photoconductive detectors at the wavelength region 20μm to 1mm and also of those at 10μm with high frequency modulation capability in the frequency region 400 MHz to 5 GHz.
