分子線エピタクシーによる Au/ZnSe: Mn/n-Ge DCエレクトロルミネセンス素子
1982 年 51 巻 3 号 p. 372-375
詳細
1982 年 51 巻 3 号 p. 372-375
A thin film electroluminescent (EL) cell having Au/ZnSe: Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). The lowest threshold voltage attained is 6 V. Typical driving performance of the EL cell gives 73 fL in brightness at the DC mode ope-ration of 12. 8 V and 14.7 A/cm2 and the best quantum efficiency is 4.3×10-5 (at 10. 8 V, 3 A/cm2).
