抄録
For the preparation of SiC film, powder and whisker by the CVD method, tetrame-thyldisilane (TMDS) was used as a starting material. This paper is mainly devoted to the discussion of the formation of ultra-fine particles of SiC. By changing the pyrolytic conditions, the particle size of the β-type SiC can be controlled in the range of 5_??_200nm with a high degree of homogeneity. The present SiC powders could be useful as a raw material for the ceramics.
