抄録
We report the results of examination for nitrogen concentration in a-Si: H films mea-sured by secondary ion mass spectrometry (SIMS). It is very difficult to measure accu-rately the concentration of elements such as Be, N, Ne and so on which have extremely low electron affinity by SIMS as secondary negatively charged ions. It is, however, shown in this report that the nitrogen con-centration in a-Si: H films can be measured by SIMS as molecular ions of SiN-.
