加速器
Online ISSN : 2436-1488
Print ISSN : 1349-3833
加速器中性子源の利用
半導体の耐性試験―加速器によるシングルイベント耐性の実測評価―
小林 和淑
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ジャーナル フリー

2017 年 13 巻 4 号 p. 245-252

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Our daily life highly depends on semiconductor devices such as smart phones. They are also used for social facilities and automotive which must have higher reliability. The soft error has been recognized for these four decades, which is the phenomenon that contents of semiconductor storage elements are flipped by neutron or alpha particles. Since it rarely occurs on the terrestrial region, acceleration tests are mandatory to evaluate radiation hardness. This paper first introduces the single event effects on semiconductor chips. Then soft-error mitigation techniques are explained on process, device and circuit levels. We finally explain how to measure radiation hardness by particle accelerators and conclude this paper.

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© 2017 日本加速器学会
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