加速器
Online ISSN : 2436-1488
Print ISSN : 1349-3833
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飛行時間法を用いた10 meV~800 MeVの中性子半導体ソフトエラー断面積の実測
岩下 秀徳 木内 笠広島 芳春奥川 雄一郎瀬邊 智己武多 実紀佐藤 博隆加美山 隆古坂 道弘鬼柳 善明
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2023 年 20 巻 3 号 p. 175-181

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We successfully measured semiconductor soft error cross sections at continuously varying neutron energies from 10 meV to 800 MeV, where measurements have not previously been made. The findings reveal, for the first time, a complete picture of the energy dependence of semiconductor soft errors. Taking countermeasures against soft errors, which are malfunctions caused by cosmic rays (solar flares and radiation from galaxies), is essential for electronic devices that support our current social infrastructures. Elucidating the soft error cross section for different neutron energies is of prime importance for studying such countermeasures. Going forward, further developments of soft error countermeasures based on these results will lead to safer and more secure social infrastructures.

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© 2023 日本加速器学会
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