Abstract
SiO2 thin films have been deposited on silicon substrates at room temperature. Sodium silicate solution and hydrochloric acid solution were mixed and were immediately dripped onto the silicone substrate. The thickness of the films obtained at pH 9.3 was about 0.1 μm by 20 min. According ot the ATR and FT-IR measurements, hydroxyl groups were not detected in the films obtained at pH 9.3. Excellent adhesion was proved for the film.