Abstract
Gel films were deposited on silicon wafers using Ba(CH3COO)2-Ti(OC2H5)4 solutions with and without polyvinylpyrrolidone (PVP). In situ stress measurement was conducted on the films during heating up to 500°C at a constant rate of 5°C min-1 and cooling down to room temperature. For the film prepared without PVP, the stress decreased with increasing temperature, turned to compressive one over 250°C, turned again to tensile one at 330°C, and increased to ca. 200 MPa at 400°C. On the other hand, for the film prepared with PVP, the tensile stress decreased with increasing temperature up to 250°C, and increased again with increasing temperature, showing the maximum value of 90 MPa at 400°C. On cooling from 500°C, both films basically showed increase in stress with decreasing temperature. The remanent stress at room temperature was 90 and 350 MPa for the films prepared with and without PVP, respectively.
