Abstract
Al-doped ZnO films were prepared on silica glass substrates using Zn(CH3COO)2·2H2O-AlCl3 solutions containing polyvinylpyrrolidone(PVP) as the coating solution. Dip-coating and firing were not repeated, performed just one time. The gel films were heated at 100°C for 10 min, at 300°C for 10 min and at 800°C for various periods of time. The thickness decreased from 0.35 to 0.3 micron with increasing heating time at 800°C up to 60 min. The resistively of the films decreased from 100 to 10-3 ohm cm with increasing heating time at 800°C up to 900 min.
