Deposition conditions and emission properties on zinc oxide thin films prepared by MBE

Takeshi Ohgaki; Yuji Kawamura; Naoki Ohashi; Hirofumi Kakemoto; Satoshi Wada; Yutaka Adachi; Hajime Haneda; Takaaki Tsurumi

doi:10.14853/pcersj.2002F.0.337.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.337.0

Conference information

Host: The Ceramic Society of Japan

Deposition conditions and emission properties on zinc oxide thin films prepared by MBE

Takeshi Ohgaki, Yuji Kawamura, Naoki Ohashi, Hirofumi Kakemoto, Satoshi Wada, Yutaka Adachi, Hajime Haneda, Takaaki Tsurumi

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Keywords: Zinc oxide, Emission proerties, Thin film, MBE, Aluminum, Non-equilibrium defect

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Pages 337

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Abstract

Undoped zinc oxide (ZO) and aluminum doped ZnO (AZO) films were grown using MBE. The growth rate and the electric properties were changed with the growth condition such as the growth temperature and the Zn/O supplying ratio. In the AZO films grown with the optimized growth conditions, the carrier concentration and Hall mobility were above 10²⁰cm^-3 and about 60cm²V^-1s^-1, respectively. The AZO films showed characteristics of degenerate semiconductors. The optical properties of these films were investigated by temperature dependence cathode luminescence spectra. The AZO film gave UV emission, which is not assignable to excitonic emission.

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