Effect of Ion Implantation on Pont Defect Structure in Zinc oxides

Abstract

Metastable point defects play important roles in ceramic materials, e.g. they act as carrier in zinc oxide thin films. To clarify these roles the metastable defects are introduced with Ar-ion implantation in zinc oxides, and characterized with oxygen diffusion experiment and luminescence. The oxygen diffusivity was reduced by lower Ar-ion dose, and then was increasing with increasing dose amounts. On the contrary photo-luminescence was not detected in the lowest dosed samples.