Preprints of Annual Meeting of The Ceramic Society of Japan
Preprints of Fall Meeting of The Ceramic Society of Japan
15th Fall Meeting of The Ceramic Society of Japan
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Structure and dielectric properties of BaTiO3-BaZrO3 films prepared by MOCVD
Tetsuro TohmaHiroshi MasumotoTakashi Goto
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Pages 354

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Abstract
Ba(Ti1-xZrx)O3 (x=0-1.0) films were prepared at 973 K and 400 kPa by MOCVD using Ba(DPM)2, Ti(O-i-C3H7)2(DPM)2 and Zr(DPM)4 as sources. Ba(Ti1-xZrx)O3 films showed significant (100) orientation at x≤0.15. The (100) orientation of Ba(Ti1-xZrx)O3 films decreased with increasing x. The dielectric constant (er) of Ba(Ti0.85Zr0.15)O3 films showed the highest value at room temperature. The dielectric constant of Ba(Ti0.85Zr0.15)O3 films showed a broad peak around 350 K, and decreased with increasing frequency at less than 350 K. The temperature showing the maximum er of Ba(Ti0.85Zr0.15)O3 film shifted from 353 to 363 K with increasing frequency from 1 k to 100 kHz.
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© The Ceramic Society of Japan 2002
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