Influence of substrate and buffer layer on lattice constants of ceramics thin film at high temperature

Abstract

Reciprocal space maps of CeO₂/YSZ/Si(001) grown by PLD method were obtained at high temperature by adding a heater to the sample stage. CeO₂ and YSZ thin films were epitaxally grown. By measuring lattice constats at high temperature it is conducted that a-axes of CeO₂ and YSZ thin films parallel to the substrate surface showed smaller thermal coefficients than bulk reference and a-axes perpendicular to the surface showed larger thermal coefficients. And in YSZ films a-axes parallel to the substrate surface showed decreasing with temperature around 200-300°C which thought to be the relaxation of thermal stress by generation of dislocations.