Abstract
Zirconium dioxide whiskers were synthesized using a chemical vapor deposition technique operated under atmospheric pressure. The whiskers were deposited on a silicon substrate under substrate temperature in the range from 650°C to 700°C for 120 min. The characterization of the whiskers by X-ray diffraction reveals that the whiskers are highly oriented along the (002) planes and ascertains the presence of a tetragonal structure. The observation of the morphology of the zirconium oxide whiskers indicates that the ZrO2 whiskers have an average growth rate of 0.6nm/s, an aspect ratio of 11 and a diameter of 430nm.
