I-V characteristics of MOS transistors with ferromagnetic gate film

Kan Shimizu; Satoshi Mizukami; Naoki Wakiya; Katumi Matuyama; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.14853/pcersj.2002F.0.466.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.466.0

Conference information

Host: The Ceramic Society of Japan

I-V characteristics of MOS transistors with ferromagnetic gate film

Kan Shimizu, Satoshi Mizukami, Naoki Wakiya, Katumi Matuyama, Kazuo Shinozaki, Nobuyasu Mizutani

Author information

Keywords: ferrite, electric properties, pulsed laser deposition, Hall effect, magnetic field, memory

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 466

Details

Abstract

MnZnFe₂O₄ film and CeO₂/YSZ buffer layers were deposited on the gate area of MOS transistor by pulsed laser deposition (PLD) using a KrF excimer laser. Rectangular-shaped MnZnFe₂O₄ films were fabricated by a wet chemical etch and liftoff processes. The effect of residual magnetization of the I_D-V_D characteristics of MOS transistor was examined.

Corresponding author

Register with J-STAGE for free!