Fabrication of Ferromagnetic Thin Film/Field Effect Transistor Structure and its Possibility for Memory Device

Abstract

A new-type non-volatile memory device was proposed. Ferromagnetic thin film, Ni_0.17Zn_0.20Fe_2.64O₄ (NZF), with buffer layers, [3%Al₂O₃-MgO]/CeO₂/[8%Y₂O₃-ZrO₂], were epitaxially deposited on the field effect transistor (FET) as a gate insulating materials. The thickness of each film was 180, 10, 10, 10 nm, respectively. The NZF gate with 100x100μm² was fabricated by photolithography using wet etching. NZF gate film was magnetizing in the film direction by permanent magnet. Appling appropriating gate voltage V_G (4.5∼5.0V), source-drain current I_D was changed ∼400μA by the magnetization direction.