抄録
Thin silicon oxide (SiOx) films are studied to use as anti-reflection coating films. The optical characters of SiOx films strongly depend on the deposition condition. Recognizing structure of the deposited films is an essential item for the development of anti-reflection coating SiOx film. We characterized structures of thin SiOx films deposited silicon substrates by grazing incidence X-ray diffraction (GIXS). Incident angle of 8KeV X-ray to sample surface was set at 0.16°, where the total reflection occurred at the interface between SiOx and silicon substrate. In this condition penetration depth of the incident X-ray was limited to several nm in silicon substrate, and background from substrate was reduced. Observed GIXS profiles also depend on the deposition condition of films. This result indicates that GIXS could detect discrepancy of structure originated in the deposition condition.
