抄録
Mesoporous silica films with a high porosity and an uniform pore size provided by micelle offer the possibility of creating microelectronic materials that require a low dielectric constant. In this study, mesoporous silica films have been synthesized by modifying sol-gel method in the presence of poly(ethylene oxide)-block-poly(propylene oxide)-block-poly(ethylene oxide) triblock copolymers as structure-directing agents. Depending on the types of block copolymers, mesoporous silica films with different mesostructures, pore sizes and porosities have been formed via evaporation induced self-assembly. Pore sizes of the films increased with increasing the average molecular weight of block copolymers. Chemical modification using hexamethyldisilazane vapor made it possible to obtain the hydrophobic pore surface of the films. The dielectric constant of the films fairly depended on the porosity of the films. The dielectric constants of about 1.9 ~ 2.1 were obtained for the films with the porosity of about 65 vol.%.
