Abstract
In this paper, we report the effects of Nd substitution or the ferroelectric properties of BIT. Ceramic samples of Bi4-xNdxTi3O12(BNT) (x=0.5 ∼ 1.5) were prepared by solid-state reaction. XRD patterns revealed that BNT with x less than 1.2 was single phase. Curie temperature (Tc) is decreasing with increase of x and reaches room temperature at x=1.2. The higher 2Pr of 26.14μ C/cm2 is obtained x=1.0.BNT thin films for x=1.0 have been prepared by sputtering method. Using BNT target with excess of Bi2O3(∼ 50mol%), BNT thin films also show the higher Pr of ∼ 40μ C/cm2 in the following sputtering condition; sputtering gas pressure lPa, sputtering gas Ar:O2=9:1, substrate temperature 650∼700°C.
