Abstract
In this letter, we report on the effect of Ni doping on the tunability and dielectric loss of BST thin films with the change of Ni doping concentration. Perovskite Ba0.6Sr0.4TiO3 thin films were deposited on Pt/Ti/SiO2/Si and LSCO/Pt/SiO2/Si substrates by pulsed laser deposition. At an applied voltage of 5V, the tunablility values of Ba0.6Sr0.4TiO3 films grown on Pt and LSCO/Pt were 12.6% and 62.8% at 100kHz, respectively. The Ni doping effects were studied for BST thin films grown on LSCO buffer layer. With 1% Ni-doped BST thin films, results gave a tunability of 54.2% and a loss tangent as low as 0.0183 and a figure of merit of ~30. This work demonstrates a potential use for 1 mol % Ni doped BST thin films in tunable microwave devices
