抄録
Bismuth titanate is the most historical one of Bi-based layer-structured ferroelectrics and has been studied for application to various advanced devices such as ferroelectric random access memories, piezoelectric resonators and actuators in thin or thick film configurations. However, the material still has serious problems, which are basically relating to large anisotropy in the crystal structure and electrical properties. In this paper, we will discuss current potentials of chemical design in alkoxy-derived precursors for the films of bismuth titanate in order to break through the high barrier for application to the integrated ferroelectric devices.
