抄録
Yttrium manganese oxide has been proposed as a candidate for application to the 1-transistor type memory cell because it has a low dielectric constant. (Y,Yb)MnO3 is also ferroelectric material and the substitution of Y by Yb is expected to cause the stabilization of the ferroelectric phase. In this work, the ferroelectric (Y,Yb)MnO3 films were prepared via alkoxy-derived precursors synthesized using yttrium, ytterbium and manganese iso-propoxide as starting chemicals and 2-methoxyethanol as a solvent. (Y,Yb)MnO3 films were prepared by spin coating the precursor solutions. The ferroelectric hexagonal phase crystallized in argon atmosphere and the films had high crystallinity and high degrees of c-axis orientation. It was found that the substitution of Y by Yb in YMnO3 lowered the crystallization temperature. The ferroelectric properties of the (Y,Yb)MnO3 films will be discussed in detail.
