抄録
The temperature dependence of the electrical properties and piezoelectric response of Pb(ZrxTi1-x)O3 (PZT, x= 0.3, 0.52, and 0.7) thin films are investigated. The 1 μm-thick PZT thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by chemical solution deposition. The temperature dependence of dielectic and ferroelectric properties of the films in the temperature range from -250°C to 150°C. The temperature-dependent polarization hysteresis loops indicate that the films with higher Zr content possess potentially lower Curie temperature. The temperature-dependent strain loops from PZT films were measured using scanning probe microscopy in the temperature range from -100°C to 150°C; their temperature dependence was relatively small.
