Effect of Annealing Atmosphere on the Orientation of PZT Films Prepared by RF Magnetron Sputtering

抄録

Amorphous PZT (Pb/Zr/Ti=1.1/0.54/0.46) thin films were prepared on Pt/TiO_x/SiO₂/Si substrates by RF magnetron sputtering at room temperature in 10%-O₂/Ar under a total pressure of 1.3Pa. Crystallized PZT films were obtained by RTA (rapid thermal annealing) in N₂-O₂ mixture gases at 750°C. The orientation of PZT films changed depending on oxygen partial pressure (PO₂) in N₂-O₂ atmosphere. (100) orientation was significant at lower PO₂, and (111) orientation at higher PO₂. The remnant polarization and coercive field of the (100) oriented films were 25.2μC/cm² and 41.5kV/cm, and the (111) oriented films were 27.6μC/cm² and 50kV/cm, respectively.