抄録
Lead Zirconium Titanium oxide: Pb(Zr,Ti)O3 thin films were fabricated on Pt(111)/TiOx/SiO2/Si(100) and some oxide electrodes(SRO,IrO2) on Si substrates by the metal organic decomposition(MOD) method. A leakage current and ferroelectric polarization switching in these PZT film capacitors were measured. We have discussed to the nature of electrical conduction, and a fatigue of ferroelectric polarization switching in the PZT films. Therefore, it is clearly that a variety of mechanism including surface-limited process such as Schottky, Poole-Frenkel and Space-Charge-Limited-Currents (SCLS), the fatigue of polarization switching caused by a ferroelectric domain pinning effect.
