抄録
MWCNTs were coated with SiC layer using SiO vapor. The growth mechanism of SiC and the oxidation resistance of the SiC-coated MWCNTs were studied. The growth of the SiC layer was controlled with the partial pressure of CO using the carbon felt placed in a crucible for SiC coating. The nanometer sized SiC particles were deposited by the reaction between SiO(g) and CO(g). On the other hand, the thin surface of MWCNT was converted to the SiC layer when the carbon felt was not used. The oxidation durability of MWCNTs was improved by the SiC coating. MWCNTs were oxidized completely in air at 650oC for 60 min. However, about 90 mass % of the SiC-coated MWCNTs remained after the same oxidation test.
