抄録
A thin film including β-silicon carbide was synthesized by a reaction of gaseous silicon monoxide and carbon source derived from polyimide film (PIF). Formation mechanism of β -SiC film formed by the reaction from carbon film and SiO gas at 1400°C was investigated through relationship among formation ratio of the SiC, synthesis time and atmospheres, and formation processes were simulated kinetically by the calculations solving differential equations. The sample obtained had film shape similar to that of the carbon source film. Two reacted regions were found on both surfaces of the source film, as well as the un-reacted region in the middle of the sample with less than 3 h synthesis time. Results of the simulated curves calculated from 5 chemical equations and 10 rate constants have a good agreement with the experimental results of the formation ratio for the SiC as a function of synthesis time.
