抄録
Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (A`5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathodeluminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n-type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.
