抄録
Yttria stabilized zirconia (YSZ) films were prepared on alumina substrates by laser chemical vapor deposition using Zr(dpm)4 and Y(dpm)3 precursors. Substrates were pre-heated up to 1023 K and Nd:YAG laser was irradiated on substrates with the spot diameter of 20 mm covering the whole substrate surface. When the pre-heating temperature (T) was 1023 K, the deposition rates drastically increased above laser power (P) of 70 W, and reached to a constant value of 230 μm/h at P=150 to 200 W. The highest deposition rate obtained in this study was 660 μm/h by optimizing deposition conditions. Morphology of YSZ films changed from columnar to cone structure with increasing deposition rate. YSZ films with the columnar structure showed a (200) orientation, and the orientation became significant with increasing deposition rates. .
