抄録
In the solid state ionics arena, there is much interest in reducing the operating temperatures of solid state oxide fuel cells (SOFC) by shifting from bulk to thin film electrolytes. The continued drive towards ever-smaller submicron lateral dimensions in MOSFET technology requires that SiO2 be replaced with higher dielectric constant materials promising equivalent capacitances with reduced leakage and threat of electrical breakdown. In this presentation, we examine the options for embedding miniaturized thin film or SOFC structures as sensors or power sources together with microelectromechanical (MEMS)components, and other active electronics into the same silicon wafer.
