抄録
This study is to synthesize lead-free ferroelectric material, (Bi1/2Na1/2)TiO3 using the Liquid Sprayed Mist Chemical Vapor Deposition (LSMCVD) technique. The precursor solution was made from Bi2O3, Na2CO3, HNO3, titanium tetra iso-propoxide(TTIP) and 2-methoxyethanol. The mist of precursor solution was carried into a furnace by argon gas. Then, the mist was vaporized and deposited on two different substrates of Si(100) and (111)Pt/TiO2/SiO2/Si(100) under an oxygen atmosphere. The concentration of the precursor solution was 0.02 M. The deposition temperature and time were varied in the range of 400-600°C and 30-90min. (Bi1/2Na1/2)TiO3 thin film had preferred orientations of (110). The thickness of the thin film deposited was 35-162nm. The remnant polarizations (2Pr) and the dielectric constant were 5.664-2.308μC/cm2, 50-350, respectively.
