Ga Isotope Implantation and Diffusion in Single-Crystal ZnO

抄録

The ion implantation is widely used to modify the surface of several materials. It is well known that this technique introduces the radiation damages as well as the implants. Because of these defects, the diffusion of implant behaves the unique phenomenon. In this paper, we have selected ZnO single-crystal and carried out the Ga isotope implantation from Ga metal source. After the annealing, Ga concentration profiles are divided into two regions; one is Gaussiun type region and another is the plateau region. The plateau region results from the Ga diffusion during the annealing. We would like to discuss the defects chemistry on the basis of the analysis of the diffusion profile.