日本セラミックス協会 年会・秋季シンポジウム 講演予稿集
16th Fall Meeting of The Ceramic Society of Japan & The 5th International Meeting of Pacific Rim Ceramic Societies(PacRim5)
セッションID: 17-P-14
会議情報

Preparation and Gas Barrier Properties of Si-O-C-N Films by Ion Plating.
*Atsushi TAKAMATSUHideo OMOTOToshiyuki SUGATakashi KOBAYASHIHiroshi NAKASHIMA
著者情報
会議録・要旨集 フリー

詳細
抄録
Highly transparent Si-O-C-N films were successfully deposited on glass and plastic substrates using direct current arc-discharge ion plating method. The deposition rate, refractive index, and absorbance of the films on glass substrates were evaluated as a function of discharge electron power, total gas pressure, and flow rates of nitrogen and carbon dioxide gas. The visible transmittance of the optimized film was approximately 85%. Moisture and oxygen permeation rates of the films on polyethyleneterephthalate (PET) films were measured by MOCON detection instruments, which were conventional permeation test equipments. The resulting Si-O-C-N films prepared have a possibility of gas barrier film application for organic light emitting diode (OLED) displays.
著者関連情報
© The Ceramic Society of Japan 2003
前の記事 次の記事
feedback
Top