Hight Electrical Breakdown Properties of Ceramic Thin Layer Formed by Aerosol Deposition Method

抄録

Many applications of microelectronics require fabrication of high quality dielectric isolation layers on various kinds of substrate. For these purpose a reliable and cheap technology to realized elements integration (transmitted lines, capacitors, resistors etc.) is necessary. Aerosol Deposition Method (ADM) can satisfy to such requirements. Electrical breakdown of Al₂O₃ and PZT 1-10- &microm -thick films deposited using ADM were investigated. Resistively of as deposited films are very high and for Al₂O₃ was 10¹⁵ Ω•cm at 100 kV/cm, decreasing to 10¹⁴ Ω•cm at 2 MV/cm (which is close to that of bulk material). Resistively of as deposited PZT film is one order higher than that of bulk PZT. Minimum values of electrical breakdown of alumina over 2 MV/cm and of PZT over 500 kV/cm were achieved. Breakdown electrical filed of alumina increases increasing layers thickness, which is contrary to PZT films′ property.