Abstract
High temperature electrical conductivity and thermoelectric power of amorphous boron and polycrystalline boron phosphide films grown in silica glass by deuterium lamp CVD process were measured to evaluate the thermoelectric figure-of-merit (Z), which was determined by the electrical conductivity of the film, In particular, the Z value for photo-thermal BP films was higher (10-4/K) than boron films, indicating that they are promising for high-temperature thermoelectric materials.