Structural analysis of indium oxide deposited by low-temperature CVD

Abstract

Indium oxide films were deposited using an atmospheric CVD reactor on the Si(100) substrate. X-ray diffractometry revealed that the cluster size of samples deposited at substrate temperatures of 350°C, 450°C and 550°C were 9 nm, 14 nm and 41 nm, respectively. On the other hand, the sample obtained at a temperature of <250°C had amorphous structure. For the sample deposited at 350°C∼450°C, the cluster was terminated by OH group. The In2O3 crystal without OH group was formed at a temperature of 550°C.