Abstract
(K0.5Na0.5)NbO3 thin films were deposited on Si crystal substrate with Si3N4 layer by pulse-laser deposition. The rf sputtering Pt/Ti layers and SrRuO3 layer deposited by laser on the substrate were employed as the lower electrodes. In order to estimate the influence of the thermal stress due to Si crystal substrate, the Si crystal substrate with Si3N4 layer was etched with KOH solution, and Si3N4 membrane substrates were formed. The electric properties of (K0.5Na0.5)NbO3 films deposited on those substrates with various lower electrodes were studied.
