Abstract
We report the temperature-dependent properties of ferroelectric thin films such as PZT and BZT. The large-signal field-induced strain from the macroscopic capacitor top electrode/ferroelectric film/bottom electrode, and small-signal microscopic PZT or BZT capacitor consisting with probe microscopy tip/PZT or BZT/bottom electrodes. 1μm-thick PZT films on were prepared from Inostek chemical solution. 0.5μm-thick Ba(Zr0.2Ti0.8)O3 (BZT) thin films were prepared on by chemical solution deposition. Measurements of the temperature large-signal electric-field-induced displacements of the films were performed using a combination of scanning probe microscopy (SPM) and a ferroelectric tester. Small-signal measurements were performed using a combination of SPM and a lock-in amplifier. For the temperature-dependent displacement measurement, a stage with a heater and thermocouples were employed. The temperature dependence of large-signal displacement loops of the BZT thin films at -100°C, 20°C and 100°C are measured. And the averaged piezoresponse signal at various temperatures are also measured. At 20°C, piezoresponse signal is most intense. The lower signal at 100°C is due to loss of ferroeletricity, and lower signal at -100°C is partly due to the effect of contraction of ferroelectric domains.
