抄録
Divalent europium activated β-sialon (Si6-zAlzOzN8-z, 0.1 <= z <= 2.0) phosphors with dopant concentration varying in the range of 0.02 – 1.5 mol% were synthesized by firing the powder mixture of Si3N4, AlN, Al2O3 and Eu2O3 at 2000oC for 2 h under 1.0 MPa N2. The samples with lower z-values show higher phase purity, finer and more uniform particle size, and higher emission. Green luminescence of Eu2+ is achieved in β-sialon upon near-ultraviolet (n-UV) or blue-light excitations. These materials have great potentials as down-conversion green phosphors for white light-emitting diodes utilizing GaN-based excitation in the near UV or blue light regions.
