Effects of Si:C Ratio and Carbon Source on Properties of Porous Self-Bonded Silicon Carbide Ceramics

抄録

Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1700 to 1850 ^oC using SiC, silicon, and three different carbon (C) sources, including carbon black, phenol resin, and xylene resin. The effects of the Si:C ratio and carbon source on properties were investigated as a function of sintering temperature. It was possible to fabricate self-bonded SiC ceramics with porosities ranging from 36% to 53%. The maximum strength of self-bonded SiC ceramics was obtained when the carbon source was carbon black and the Si:C ratio was 5:1.