抄録
Ferroelectric films such as Pb(Zr,Ti)O3 [PZT] are used in ferroelectric random access memory (FeRAM) and MEMS. As the PZT film becomes thinner for low voltage applications, thin film stress and lateral dimensions or size effects become more important. Previous work by Stolichnov et al. APL 80 (2002), showed that micron size PZT capacitors show anomalous behavior in the ferroelectric domains, which could not be explained. Recently, a mechanism for this anomaly has been proposed by Gruverman et al. APL 93 (2008), based upon finite element stress simulation and free energy that calculation indicates that the anomaly is due in part to the top electrode thickness. The impact of film stress and substrate on the ferroelectric film domain pattern and structural relationships will be reviewed and discussed.
