The Formation of Step Structures in Aluminum/Sapphire Hetero interfaces

抄録

Aluminum/Sapphire hetero interfaces were characterized using HRTEM and TEM-EDX. Step structures of sapphire at the interface were found to be a general characteristic in the formation of the interface. During liquid-phase bonding, addition of silicon in aluminum played a critical role in reducing the step growth at the interface. Silicon was found to preferentially segregate at the interface. It was discovered that silicon precipitates at the interface form an epitaxial relationship with sapphire. The strong preferential segregation of silicon at the interface combined with the stable orientation relationship of its precipitates with sapphire, suggest the strong bond in liquid-phase bonded aluminum/sapphire interfaces.