抄録
SiC ceramics were reaction joined in the temperature range of 1450-1800 degree C by using TiB2-based composites starting from four kinds of joining materials, namely Ti-BN, Ti-B4C, Ti-BN-Al and Ti-B4C-Si. XRD analysis and microstructure examinations were carried out on the SiC joints. It was found that the former two joining materials do not yield good bond for SiC ceramics at temperatures up to 1600 degree C. However, Ti-BN-Al results in the connection of SiC substrates at 1450 degree C by the formation of TiB2-AlN composite. Dense interlayer and crack-free interface are produced from both Ti-BN-Al and Ti-B4C-Si powder mixture at 1800 degree C.Mechanical properties of dense SiC joints were measured and analyzed.
