抄録
In order to solve pattern collapse problems caused by high aspect ratio, new acetal-based chemically-amplified positive tone resists for electron beam lithography were investigated. Electron beam lithography is in the initial stages of utilization for device manufacturing and high-end mask making. The resist screening results using 70 kV direct writing electron beam tool showed high resolution, good pattern profiles and reduced substrate influence. Dry etching resistance was also studied.
