Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Tetrafluoroethylene-based Fluoropolymers for 157-nm Resist Materials
M. ToriumiT. IshikawaT. KodaniM. KohT. MoriyaT. ArakiH. AoyamaT. YamashitaT. YamazakiT. FurukawaT. Itani
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2003 Volume 16 Issue 4 Pages 607-613

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Abstract
Tetrafluoroethylene-based copolymers with functional norbornenes were synthesized and their fundamental properties, such as transparency at 157 nm and solubility in a standard alkaline developer, were characterized. A high transparency, i.e., absorbance of less than 0.5 μm-1, was achieved by optimizing the polymerization conditions with a variety of functional norbornene monomers. Positive-working resists formulated by the fluororesins were developed and showed good transparency of less than 1 μm-1 at 157 nm, and good developability without any swelling behavior in a standard alkaline solution of 0.26-N tetramethylammonium hydroxide, and an acceptable dry-etching resistance as good as ArF resists. And fine patterns of 65-nm dense lines and spaces could be delineated by the exposure at 157-nm wavelength.
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© 2003 The Society of Photopolymer Science and Technology (SPST)
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