抄録
For the enhancement of the Lithography Technology, photo-resist performance, especially in base polymer, has important rules. Currently, in ArF lithography, base polymer of poly-acrylate has been widely selected, but the performance especially in contact-hole pattern has very severe limit in process window, such as DOF. In this presentation, by using poly-acrylate polymer, which has fairly good PEB margin and thermal stability, we further studied thermal flow performance of its in different polymer disparity. As the result, we observed that low disparity polymer showed small thermal flow rate and consequently, showed enhancement of common DOF in contact-hole pattern.