Abstract
We investigated the influence of contact barrier height on the performance of polymer field-effect transistors (FETs) by using metals with work functions closely matching the electron and hole transport levels of the polymer or by adjusting the individual HOMO/LUMO levels of the polymer layer. No clear relationship between the bulk mobilities measured by time-of-flight method and the field-effect mobilities calculated from saturation drain current was found in the present study. In contrast, the field-effect mobilities in π-conjugated polymers used in this study show a tendency to slightly increase with a decrease in carrier injection barrier.
