2005 Volume 18 Issue 2 Pages 263-266
Cu dispersed C-S dielectric thin film is produced by performing simultaneously the plasma CVD of CH4, SF6, and Ar mixture gas, and the sputtering of Cu plate discharge electrode. The C-S film was supposed to be formed by HF dissociation reaction in the plasma CVD process. Effect of substrate holder temperature on the deposition was studied. With increasing the temperature, sulfur content was decreased but oxygen content was increased. At 400°C, the sulfur content became negligibly small. X-ray diffraction of Cu dispersed C-S dielectric thin film showed no peak caused on Cu cluster. Because oxygen was not mixed in the reaction gas, large oxygen content was referred to oxidization of atomically dispersed Cu atom in the film in the air.
